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 Bulletin I25178 rev. B 04/00
ST183C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2 t @ 50Hz @ 60Hz VDRM /VRRM tq range TJ
ST183C..C
370 55 690 25 4900 5130 120 110 400 to 800 10 to 20 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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1
ST183C..C Series
Bulletin I25178 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
04 ST183C..C 08 800 900 400
VRSM , maximum non-repetitive peak voltage V
500
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 770 730 600 350 50 VDRM 50 40
ITM 180oel 660 600 490 270 50 50 55 1220 1270 1210 860 50 VDRM 40
ITM 100s 1160 1090 1040 730 50 55 5450 2760 1600 800 50 V DRM 40
ITM
Units
4960 2420 1370 680 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST183C..C
370 (130) 55 (85) 690 4900 5130 4120 4310
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC@ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
120 110 85 78 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1200
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST183C..C Series
Bulletin I25178 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
ST183C..C Units
1.80 1.40 1.45 0.67 m 0.58 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST183C..C
1000 1.1 Min 10 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST183C..C
500 40
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST183C..C
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST183C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
50 TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.016 0.019 0.024 0.035 0.060
Rectangular conduction
Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
18
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for t q test condition) dv/dt - tq combinations available
50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK
dv/dt (V/s) 20 8 - t q code 10 CN 12 CM 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) t (s) 15 CL q 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 18 CP 20 CK
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number. All other types available only on request.
4
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
Maxim um Allowable Heatsin k Tem perature (C)
130 120 110 100 90 80 70 60 50 40 0 40 80
M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (C )
ST183C..C Series (Single Side Cooled) R thJ-h s (DC) = 0.17 K/W
130 120 110 100 90 80 70 60 50 40 30 20 0 50 30
S T 1 8 3 C ..C Se rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .1 7 K / W
C o nd uctio n A ng le
C on duc tion Pe rio d
30
60
60 90 1 20 1 80 DC 10 0 15 0 20 0 2 50 30 0 35 0 4 00
90
180 120 200 240
120
160
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST183C..C Series
Bulletin I25178 rev. B 04/00
M a x im u m A llo w a b le H e a t sin k T e m p e ra tu re (C ) M a x im um A llo w a ble H e a t sin k Te m pe ra tu r e ( C ) 130 120 110 100 90 80 70 60 50 40 30 0 50 1 0 0 1 50 2 0 0 2 50 30 0 3 50 4 0 0 45 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nduc tion A ng le
ST 1 8 3 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 8 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 10 0 2 00 30 60
S T 1 8 3 C ..C Se rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 8 K / W
Co n duc tion Pe rio d
30 60 90 120 180
90 120 180 300 4 00 5 00 DC 60 0 70 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
M a x im u m A v e ra g e O n -st a t e P o w e r L o ss (W )
1 0 00 9 00 8 00 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 A v e ra g e O n -st a te C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
C o nd uc tio n A ng le
Maxim um Average O n-state Power L oss (W )
1400 1200 1000 800 DC 180 120 90 60 30
18 0 12 0 9 0 6 0 3 0 R M S L im it
600 RM S Lim it 400 200 0 0 100 200 300 400 500 600 700 Averag e On -state Curren t (A)
Fig. 6 - On-state Power Loss Characteristics
Co n du ctio n Pe riod
S T 1 8 3 C ..C Se rie s T J = 1 2 5 C
ST183C..C Series T J = 125C
Peak Half Sin e W ave O n-state Current (A)
4000
At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e a k H a lf S in e W a v e O n - sta t e C u rre n t (A )
4500
5000
3500
M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l 4500 O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l T J = 1 2 5 C N o V o lta g e Re a p p lie d 4000 Ra t e d V RRM R e a p p lie d 3500 3000 2500
3000
2500 ST183C..C Series 2000 1 10 100
N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N )
ST 1 8 3 C ..C S e rie s 0.1 P u lse T ra in D u ra tio n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
2000 0.01
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST183C..C Series
Bulletin I25178 rev. B 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ -h s (K / W ) 10000 Instantaneous On-state Current (A) ST 183C..C Series 1 ST 1 8 3 C ..C Se rie s
0 .1
1000 T J = 25C T J = 125C
0 .0 1
S t e a d y S ta t e V a lue R th J-hs = 0 .1 7 K / W (S in gle S id e C o o le d ) R th J-hs = 0 .0 8 K / W (D o u b le Sid e C o o le d )
100 1 1.5 2 2. 5 3 3.5 4 4.5 Instan taneous O n-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0 .0 0 1 0 .0 0 1
(D C O p e ra t io n ) 0 .0 1 0 .1 1 10
Sq u a r e W a v e Pu lse D u ra t io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maxim um Reverse Recovery Ch arge - Q rr (C)
ST183C..C Series T J = 125 C 200
I
TM
= 50 0 A 3 00 A 2 00 A
Maxim um Reverse Recovery Current - Irr (A)
250
160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Rate O f Fall Of Forw ard Curren t - di/dt (A/ s)
Fig. 12 - Reverse Recovery Current Characteristics
I T M = 5 00 A 30 0 A 2 00 A 1 00 A 50 A
150
10 0 A
100
50 A
50
ST183C..C Series T J = 125 C
0 0 10 20 30 40 50 60 70 80 90 100 Rate O f Fa ll O f O n -state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
1E4
Snub ber c ircu it R s = 47 o hm s C s = 0 .22 F V D = 80 % V D RM 1 00 50 Hz 1 50 0 2 50 0 3 0 00 ST183 C. .C Se ries Sinuso ida l p ulse T C = 40 C 5 00 0 tp 10 00 0 ST1 83 C..C Serie s Sinusoidal pulse T C = 55 C 10 00 5 00 Snub be r c irc uit R s = 47 oh m s C s = 0.22 F V D = 8 0% V D RM
P e a k O n -s ta t e C u rre n t (A )
50 0 40 0 20 0 1 50 0 1 00 0
40 0 2 00
1 00
50 Hz
1E3
2 50 0 3 0 00 5 00 0 tp 1 00 0 0
1E2 1E1
1E2
1E3
1 E14E 41 E 1 1 1E
1 E2
1 E3
1E4
P u lse B a se w id th ( s)
Fig. 13 - Frequency Characteristics
P u lse B ase w id t h ( s)
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ST183C..C Series
Bulletin I25178 rev. B 04/00
1E4
Snub ber c irc uit R s = 47 o hm s C s = 0 .22 F V D = 8 0% VD RM Snu bbe r c ircuit R s = 47 ohm s C s = 0 .22 F V D = 80 % V D RM
P ea k O n -st a te C u rr en t ( A )
1E3
1 50 0 2 500 3 00 0 5 0 00 10 00
2 00 50 0 40 0
1 00 5 0 H z 1 50 0 10 00
200 500 40 0
100
50 H z
tp
ST18 3C ..C Se rie s Tra pezo idal pulse T C = 40C di/d t = 5 0A/s
2 50 0 3 000 5 00 0 tp ST1 83 C..C Series Trape zoidal pulse T C = 55 C di/dt = 50A /s
1E2 1 E1
1 E2
1 E3
1E 1 E14E 4 1 E 1 1
1E2
1 E3
1E4
P u lse B a se w id th (s)
Fig. 14 - Frequency Characteristics
P u lse Ba se w id th (s)
1E 4
Snub be r c irc uit R s = 4 7 o hm s C s = 0 .22 F V D = 8 0% V R M D
P e ak O n -st a t e C u rre n t (A )
Snub ber circuit R s = 47 o hm s C s = 0 .22 F V D = 8 0% V D RM 400 2 00 10 0 50 Hz 15 00 2 50 0 3 00 0 50 00 ST18 3C ..C Se rie s Trape zoidal pulse T C = 4 0C d i/dt = 1 00 A/s 10 00 0 tp ST183 C.. C Serie s Trapezo ida l pulse T C = 55 C di/dt = 10 0A/s 1 000 50 0 40 0 2 00 10 0 50 Hz
1E 3
1 50 0 2 50 0 3 0 00 5 00 0
1 00 0 5 00
1E 2
10 00 0
tp
1E 1 1E 1
1 E2
1E3
1 E14E 4 1 E 1 1 1E
1 E2
1 E3
1 E4
P u lse B ase w id t h ( s)
Fig. 15 - Frequency Characteristics
Pu lse B ase w id th (s)
1E5
ST18 3C. .C Se ries Re ctan gular pulse di/dt = 5 0A/s
P e a k O n -st a t e C u rre n t (A )
tp
1E4
2 4 10
20 jo ules pe r pulse 4 2 1 0.5 0 .3 0. 2 0 .1 10
20 jo ules pe r pulse
1E3
0. 2 0 .1
0.3
0. 5
1
1E2
tp ST1 83C ..C Serie s Sinusoidal pulse
1E1 1E 1
1E 2
1 E3
1E 1 E14E 4 1 E 1 1
1E2
1E3
1 E4
P ulse Ba se w id th (s)
Pu lse B ase w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST183C..C Series
Bulletin I25178 rev. B 04/00
1 00 In st an t a n e o us G a te V o lt a g e ( V ) Re c ta n g ula r ga t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 s b ) R e c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s 10 tr< = 1 s (b )
Tj=-40 C Tj=2 5 C Tj=1 25 C
(1) (2) (3) (4) (a )
PG M PG M PG M PG M
= = = =
10 W , 20 W , 40 W , 60 W ,
tp tp tp tp
= = = =
20m s 10m s 5m s 3 .3 m s
1 V GD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3) (4)
D e v ic e : ST 1 8 3 C ..C S e rie s F re q u e n c y L im ite d b y PG (A V ) 0 .1 1 10 1 00
In st a n t a n e o u s G a t e C u rre n t ( A )
Fig. 17 - Gate Characteristics
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